The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Jul. 11, 2019
Panasonic Corporation, Osaka, JP;
PANASONIC HOLDINGS CORPORATION, Osaka, JP;
Abstract
Nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity above the substrate; a second nitride semiconductor layer of a second conductivity different from the first conductivity, above the first nitride semiconductor layer; a first opening penetrating through the second nitride semiconductor layer; an electron transport layer and an electron supply layer disposed along inner surfaces of the first opening, in stated sequence from the substrate-side; a gate electrode above the electron supply layer, covering the first opening; a source electrode connected to the electron supply layer and the electron transport layer, at a position separated from the gate electrode; and a drain electrode on a surface of the substrate opposite to a surface on which the first nitride semiconductor layer is disposed. At least part of the second nitride semiconductor layer is fixed to a potential different from a potential of the source electrode.