The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Dec. 20, 2021
Applicant:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Inventors:
Wei-Chun Chang, Taichung, TW;
You-Di Jhang, New Taipei, TW;
Chin-Chun Huang, Hsinchu County, TW;
Wen Yi Tan, Fujian, CN;
Assignee:
United Semiconductor (Xiamen) Co., Ltd., Fujian, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 23/522 (2006.01); H01L 29/78 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5228 (2013.01); H01L 27/0688 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 28/24 (2013.01);
Abstract
A semiconductor device includes a resistor disposed on a second etching stop layer in the resistor forming region. A fourth interlayer dielectric layer covers the resistor and the second etch stop layer. A first via is located in the fourth interlayer dielectric layer and is electrically connected to a terminal of the resistor. By forming the resistor in BEOL process, the problem of the contact stop depth difference that affects the process window and causes the reduced yield can be improved.