The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

May. 24, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Tai-Yi Chen, Hsinchu, TW;

Yung-Chow Peng, Hsinchu, TW;

Chung-Chieh Yang, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/552 (2006.01); H01L 49/02 (2006.01); H03M 1/38 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5225 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01); H01L 23/552 (2013.01); H01L 28/40 (2013.01); H01L 28/60 (2013.01); H01L 28/86 (2013.01); H01L 28/92 (2013.01); H03M 1/38 (2013.01);
Abstract

An integrated circuit structure includes a first capacitor structure, disposed in a first layer on a semiconductor substrate and comprising a plurality of capacitors; a second capacitor structure, adjacent to first capacitor structure in the first layer, wherein the second capacitor structure and the first capacitor structure are arranged as a strip-shaped structure; a first conductive plate, disposed at one end of the strip-shaped structure in the first layer; and a second conductive plate, disposed in a second layer on the semiconductor substrate over the strip-shaped structure and extending toward the other end of the strip-shaped structure from the one end of the strip-shaped structure.


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