The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 10, 2024
Filed:
Aug. 23, 2021
Applicant:
Changxin Memory Technologies, Inc., Anhui, CN;
Inventor:
Daejoong Won, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H01L 21/2251 (2013.01);
Abstract
A method for forming a semiconductor structure includes: providing a substrate, a gate dielectric layer and an undoped polycrystalline silicon layer sequentially stacked; performing a thermal doping process, and doping first doping ions in the polycrystalline silicon layer; and performing an ion implantation process, and doping second doping ions in a preset region of the polycrystalline silicon layer. The preset region is spaced at a preset distance from a surface of the polycrystalline silicon layer away from the gate dielectric layer in a direction perpendicular to a surface of the substrate.