The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Dec. 17, 2021
Applicant:

Advanced Micro-fabrication Equipment Inc. China, Shanghai, CN;

Inventors:

Leyi Tu, Shanghai, CN;

Rubin Ye, Shanghai, CN;

Kuan Yang, Shanghai, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32183 (2013.01); H01J 37/32091 (2013.01); H01J 37/32642 (2013.01); H01L 21/3065 (2013.01);
Abstract

A plasma reactor includes: a process chamber, at the inner bottom of the process chamber being provided a base, the base being connected to a RF power source via a RF match network, wherein a to-be-processed wafer is held above the base, an upper electrode assembly is provided at the inner top of the process chamber, and a plasma processing space is arranged between the base and the upper electrode assembly; a first conductive ground ring surrounding the outer periphery of the base; a second conductive ground ring connected between the outer sidewall of the first conductive ground ring and the inner sidewall of the process chamber, a plurality of gas channels being provided on the second conductive ground ring such that gas in the plasma processing space can be exhausted through the plurality of gas channels; an insulating ring provided between the base and the first conductive ground ring, wherein dielectric constant of the insulating ring is less than 3.5.


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