The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Aug. 12, 2021
Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Chin Tu, Zhubei, TW;

Manabu Hamano, Tochigi, JP;

Lunghsing Hsu, Hsinchu, TW;

Assignee:

GlobalWafers Co., Ltd., Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/48 (2006.01); C23C 16/458 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/488 (2013.01); C23C 16/458 (2013.01); C23C 16/52 (2013.01);
Abstract

A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.


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