The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

May. 20, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yung-Chang Chang, Taoyuan, TW;

Meng-Yin Tsai, Kaohsiung, TW;

Tung-Hsiung Liu, Tainan, TW;

Liang-Yu Yeh, Taoyuan, TW;

Chun-Yi Lee, Hsinchu, TW;

Kuo-Hsi Huang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/52 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/45527 (2013.01); C23C 16/45548 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01);
Abstract

In an embodiment, an apparatus includes: a susceptor including substrate pockets; a gas injector disposed over the susceptor, the gas injector having first process regions, the gas injector including a first gas mixing hub and first distribution valves connecting the first gas mixing hub to the first process regions; and a controller connected to the gas injector and the susceptor, the controller being configured to: connect a first precursor material and a carrier gas to the first gas mixing hub; mix the first precursor material and the carrier gas in the first gas mixing hub to produce a first precursor gas; rotate the susceptor to rotate a first substrate disposed in one of the substrate pockets; and while rotating the susceptor, control the first distribution valves to sequentially introduce the first precursor gas at each of the first process regions as the first substrate enters each first process region.


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