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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12082510 B1

PDFFull Text
Date of Patent:
Sep. 03, 2024

Filed:

Jul. 16, 2021

Magnetic tunnel junction device and method of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chih-Fan Huang, Kaohsiung, TW;

Kai-Wen Cheng, Taichung, TW;

Chen-Chiu Huang, Taichung, TW;

Dian-Hau Chen, Hsinchu, TW;

Yen-Ming Chen, Chu-Pei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Jami Valentine Miller

Int. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H10B 61/00 (2023.02); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02);
Abstract

A semiconductor device comprises a first conductive feature on a semiconductor substrate, a bottom electrode on the first conductive feature, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and a top electrode on the MTJ stack. A spacer contacts a sidewall of the top electrode, a sidewall of the MTJ stack, and a sidewall of the bottom electrode. A conductive feature contacts the top electrode.

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Quick Actions:

Huang, Chih-Fan. (2024). Magnetic tunnel junction device and method of forming the same (U.S. Patent No. 12082510). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12082510

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