The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Oct. 05, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Vignesh Sundar, Fremont, CA (US);
Yu-Jen Wang, San Jose, CA (US);
Luc Thomas, San Jose, CA (US);
Guenole Jan, San Jose, CA (US);
Sahil Patel, Fremont, CA (US);
Ru-Ying Tong, Los Gatos, CA (US);
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A dual magnetic tunnel junction (DMTJ) is disclosed with a PL/TB/free layer/TB/PL/capping layer configuration wherein a first tunnel barrier (TB) has a substantially lower resistance x area (RA) product than RAfor an overlying second tunnel barrier (TB) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PLand PL, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RAis formed on PLto provide higher PLstability. The condition RA<RAand RA<RAis achieved when TBand the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.