The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Oct. 13, 2021
Changxin Memory Technologies, Inc., Hefei, CN;
Xinman Cao, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Embodiments of the present application relate to a semiconductor structure and a formation method thereof. The semiconductor structure formation method includes the following steps: providing a base, the base including a memory region, the memory region including a substrate, a conductive layer, and a first mask layer located on the conductive layer; patterning the first mask layer to form a plurality of first dot patterns arranged in a first array; backfilling the first mask layer to form a second mask layer covering the first mask layer; patterning the second mask layer to form a plurality of second dot patterns arranged in a second array; and etching the conductive layer by using the first dot pattern and the second dot pattern together as a mask pattern to form a plurality of independent conductive dot patterns.