The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Aug. 19, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Ming-Yen Chuang, Hsinchu, TW;
Chang-Lin Yang, Taoyuan, TW;
Katherine H. Chiang, New Taipei, TW;
Mauricio Manfrini, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/06 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 27/0617 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/41741 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/66742 (2013.01); H01L 29/78642 (2013.01); H01L 29/7869 (2013.01); H01L 2029/42388 (2013.01);
Abstract
A transistor includes a gate electrode, a gate dielectric layer covering the gate electrode, an active layer covering the gate dielectric layer and including a first metal oxide material, and source/drain electrodes disposed on the active layer and made of a second metal oxide material with an electron concentration of at least about 10cm. A semiconductor structure and a manufacturing method are also provided.