The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Jun. 19, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Tsung-Chieh Hsiao, Changhua, TW;

Hsiang-Ku Shen, Hsinchu, TW;

Yuan-Yang Hsiao, Taipei, TW;

Ying-Yao Lai, Hsinchu, TW;

Dian-Hau Chen, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05008 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/13024 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19104 (2013.01);
Abstract

A device structure, along with methods of forming such, are described. The device structure includes a structure, a first passivation layer disposed on the structure, a buffer layer disposed on the first passivation layer, a barrier layer disposed on a first portion of the buffer layer, a redistribution layer disposed over the barrier layer, an adhesion layer disposed on the barrier layer and on side surfaces of the redistribution layer, and a second passivation layer disposed on a second portion of the buffer layer. The second passivation layer is in contact with the barrier layer, the adhesion layer, and the redistribution layer.


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