The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Nov. 03, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventor:

Tung-Jiun Wu, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01G 4/10 (2006.01); H01G 4/228 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01G 4/10 (2013.01); H01G 4/228 (2013.01); H01L 21/76832 (2013.01); H01L 23/3171 (2013.01); H01L 23/5223 (2013.01); H01L 23/5226 (2013.01);
Abstract

The present disclosure provides a method for forming a semiconductor structure, including forming a bottom terminal, forming a first middle terminal over the bottom terminal, forming a top terminal over the first middle terminal, forming a first passivation layer over the top terminal, forming a first recess penetrating the first passivation layer and the bottom terminal by using a photomask, forming a dummy layer over the first passivation layer, forming an opening in the dummy layer and over the first recess, forming a conductive material in the first recess and the opening, and removing the dummy layer subsequent to forming the conductive material.


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