The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Sep. 02, 2020
Applicant:

Stats Chippac Pte. Ltd., Singapore, SG;

Inventors:

Yaojian Lin, Jiangyin, CN;

Seng Guan Chow, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 22/14 (2013.01); H01L 23/49816 (2013.01); H01L 23/49838 (2013.01); H01L 23/562 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 24/97 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 23/5389 (2013.01); H01L 24/02 (2013.01); H01L 24/04 (2013.01); H01L 24/05 (2013.01); H01L 2224/02125 (2013.01); H01L 2224/02145 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/02351 (2013.01); H01L 2224/0236 (2013.01); H01L 2224/02377 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/024 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/05011 (2013.01); H01L 2224/05017 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05111 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05144 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05169 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05551 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/13124 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/92 (2013.01); H01L 2224/94 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/0535 (2013.01); H01L 2924/05432 (2013.01); H01L 2924/05442 (2013.01); H01L 2924/059 (2013.01); H01L 2924/0635 (2013.01); H01L 2924/0665 (2013.01); H01L 2924/10252 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10322 (2013.01); H01L 2924/10324 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/1205 (2013.01); H01L 2924/1206 (2013.01); H01L 2924/1207 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/14335 (2013.01); H01L 2924/1434 (2013.01); H01L 2924/186 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device has a semiconductor die. A first insulating layer is disposed over the semiconductor die. A first via is formed in the first insulating layer over a contact pad of the semiconductor die. A first conductive layer is disposed over the first insulating layer and in the first via. A second insulating layer is disposed over a portion of the first insulating layer and first conductive layer. An island of the second insulating layer is formed over the first conductive layer and within the first via. The first conductive layer adjacent to the island is devoid of the second insulating layer. A second conductive layer is disposed over the first conductive layer, second insulating layer, and island. The second conductive layer has a corrugated structure. A width of the island is greater than a width of the first via.


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