The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

Nov. 17, 2022
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Masaru Yano, Kanagawa, JP;

Toshiaki Takeshita, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/0483 (2013.01); G11C 16/3445 (2013.01);
Abstract

The disclosure provides a semiconductor device and an erasing method that may alleviate the deterioration of a memory cell caused by ISPE. The NAND flash memory in the disclosure includes a memory cell array and an erasing component that erases selected blocks of the memory cell array. The erasing component performs a first erasing verification (EV) and a second erasing verification (EV) on the selected block. When the first erasing verification (EV) passes, and the second erasing verification (EV) fails, an erase pulse with the same erase voltage as the last time is applied, and when the first erasing verification (EV) fails, an erase pulse with a step voltage higher than the last time is applied.


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