The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2024

Filed:

May. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jui-Jen Wu, Hsinchu, TW;

Win-San Khwa, Hsinchu, TW;

Jen-Chieh Liu, Hsinchu, TW;

Meng-Fan Chang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0026 (2013.01); G11C 5/063 (2013.01); G11C 13/0004 (2013.01); G11C 13/0028 (2013.01); G11C 13/0038 (2013.01);
Abstract

A memory device includes a set of word lines, a set of bit lines, a source line having first and second source line contacts, a set of transistors serially coupled between the first and second source line contacts of the source line, and a set of data storage elements. The set of transistors has gates coupled to corresponding word lines in the set of word lines. Each data storage element in the set of data storage elements is coupled between a common terminal of a corresponding pair of adjacent transistors in the set of transistors, and a corresponding bit line in the set of bit lines.


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