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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12074227 B1

PDFFull Text
Date of Patent:
Aug. 27, 2024

Filed:

May. 27, 2022

Semiconductor device including deep trench capacitors and via contacts

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Po-Chia Lai, Fremont, CA (US);

Stefan Rusu, Sunnyvale, CA (US);

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

FOLEY & LARDNER LLP

Primary Examiner:

Walter H Swanson

Assistant Examiner:

Jacob T Nelson

Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/945 (2013.01); H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 28/91 (2013.01); H01L 29/66181 (2013.01); H10B 12/37 (2023.02);
Abstract

A semiconductor device and a method of manufacturing the semiconductor device are disclosed. In one aspect, the semiconductor device includes a plurality of deep trench capacitors and a plurality of via contacts that at least partially surround the deep trench capacitors. Variations may be made to the number and locations of the plurality of via contacts such that design requirements for the packaging are satisfied.

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Lai, Po-Chia. (2024). Semiconductor device including deep trench capacitors and via contacts (U.S. Patent No. 12074227). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12074227

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