The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jul. 25, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventor:

Jagar Singh, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an emitter in a semiconductor substrate; a collector in the semiconductor substrate; a base contact region in the semiconductor substrate and adjacent to the collector and the emitter; and a shallow trench isolation structure overlapping the base contact region and separating the base contact region from the emitter and the collector.


Find Patent Forward Citations

Singh, Jagar. (2024). Lateral bipolar transistors (U.S. Patent No. 12074211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12074211

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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