The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Mar. 30, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chi-Cheng Chen, Tainan, TW;

Wei-Li Huang, Pingtung, TW;

Chun-Yi Wu, Tainan, TW;

Kuang-Yi Wu, Changhua County, TW;

Hon-Lin Huang, Hsinchu, TW;

Chih-Hung Su, Tainan, TW;

Chin-Yu Ku, Hsinchu, TW;

Chen-Shien Chen, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01F 41/04 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/532 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01F 41/046 (2013.01); H01L 21/76823 (2013.01); H01L 23/3114 (2013.01); H01L 23/3171 (2013.01); H01L 23/53204 (2013.01); H01L 24/05 (2013.01); H01L 24/32 (2013.01); H01L 24/48 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/04073 (2013.01); H01L 2224/05 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a magnetic element over the substrate. The semiconductor device structure also includes an isolation layer extending exceeding edges the magnetic element. The isolation layer contains a polymer material. The semiconductor device structure further includes a conductive line over the isolation layer and extending exceeding the edges of the magnetic element.


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