The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Jul. 10, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Richard W. Plavidal, Ridgway, CO (US);

Albert Lan, Hsinchu, TW;

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01); H01L 23/532 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 21/76841 (2013.01); H01L 23/3731 (2013.01); H01L 23/3732 (2013.01); H01L 24/03 (2013.01); H01L 24/09 (2013.01); H01L 24/11 (2013.01); H01L 24/81 (2013.01); H01L 23/53295 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/0655 (2013.01); H01L 25/50 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/02379 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05657 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/11009 (2013.01); H01L 2224/11845 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/8113 (2013.01); H01L 2224/81411 (2013.01); H01L 2224/81416 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/94 (2013.01); H01L 2924/351 (2013.01);
Abstract

Processing methods may be performed to form a fan-out interconnect structure. The methods may include forming a semiconductor active device structure overlying a first substrate. The semiconductor active device structure may include first conductive contacts. The methods may include forming an interconnect structure overlying a second substrate. The interconnect structure may include second conductive contacts. The methods may also include joining the first substrate with the second substrate. The joining may include coupling the first conductive contacts with the second conductive contacts. The interconnect structure may extend beyond the lateral dimensions of the semiconductor active device structure.


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