The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

Mar. 29, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Tatsuro Yoshino, Tokyo, JP;

Masato Suzuki, Tokyo, JP;

Masato Negishi, Tokyo, JP;

Kenji Yoshikawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); H01L 33/00 (2010.01); H01S 5/02 (2006.01); H01S 5/042 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 33/0095 (2013.01); H01S 5/0202 (2013.01); H01S 5/04256 (2019.08);
Abstract

A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.


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