The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Jul. 13, 2021
Applicant:
Changxin Memory Technologies, Inc., Anhui, CN;
Inventor:
Taoyan Yan, Hefei, CN;
Assignee:
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76855 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76843 (2013.01); H01L 21/76865 (2013.01); H01L 21/76889 (2013.01); H01L 21/76895 (2013.01);
Abstract
Some examples of this disclosure relate to the field of the semiconductor technology, and disclose a method for manufacturing a semiconductor structure. The method for manufacturing of the semiconductor structure includes: providing a base, wherein the base includes a metal layer and an oxide located in the metal layer or on a surface of the metal layer; and performing heat treatment on the base, wherein a reducing gas is introduced during the heat treatment, and the metal layer is converted into a metal compound layer after the heat treatment. This disclosure can improve the performance of the semiconductor structure.