The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2024

Filed:

May. 19, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Chong Kwang Chang, Hwaseong-si, KR;

Dong Hoon Khang, Hwaseong-si, KR;

Sug Hyun Sung, Yongin-si, KR;

Min Hwan Jeon, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 29/6681 (2013.01);
Abstract

A method of fabricating a semiconductor device is provided. The method includes: forming mask patterns on a substrate, the mask patterns including a first mask fin pattern, a second mask fin pattern and a dummy mask pattern between the first mask fin pattern and the second mask fin pattern; forming a first fin pattern, a second fin pattern and a dummy fin pattern by etching the substrate using the mask patterns; and removing the dummy fin pattern, wherein the dummy mask pattern is wider than each of the first mask fin pattern and the second mask fin pattern.


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