The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Dec. 02, 2021
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 16/04 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); H01L 21/67 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32394 (2013.01); C23C 16/042 (2013.01); C23C 16/045 (2013.01); C23C 16/047 (2013.01); H01J 37/321 (2013.01); H01L 21/67069 (2013.01); C23C 16/308 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); H01J 37/32082 (2013.01); H01L 21/31122 (2013.01); H01L 21/31138 (2013.01);
Abstract
An apparatus for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.