The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
May. 10, 2022
Micron Technology, Inc., Boise, ID (US);
Makoto Kitagawa, Folsom, CA (US);
Daniele Vimercati, El Dorado Hills, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of performing a memory cell operation can include maintaining a plate voltage at a first access line of a memory cell during at least a first operation and a second operation of the memory cell. The method can further include charging a second access line to a first voltage greater than zero and greater than a threshold voltage of a selector device of the memory cell during the first operation on the memory cell. The method can further include, subsequent to the first operation, charging the second access line to a second voltage greater than the plate voltage plus the threshold voltage of the selector device to perform the second operation of the memory cell.