The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Mar. 26, 2021
Applicant:
Entegris, Inc., Billerica, MA (US);
Inventors:
SangJin Lee, Suwon, KR;
DaHye Kim, Suwon, KR;
Sungsil Cho, Anyang, KR;
Seobong Chang, Suwon, KR;
Jae Eon Park, HwaSung, KR;
Bryan C. Hendrix, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
SooJin Lee, Suwon, KR;
Assignee:
ENTEGRIS, INC., Billerica, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C07F 7/02 (2006.01); C07F 7/10 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C07F 7/025 (2013.01); C07F 7/10 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45536 (2013.01); C23C 16/50 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01);
Abstract
Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.