The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jun. 30, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Hui-Lin Wang, Taipei, TW;
Si-Han Tsai, Taichung, TW;
Ching-Hua Hsu, Kaohsiung, TW;
Chen-Yi Weng, New Taipei, TW;
Po-Kai Hsu, Tainan, TW;
Jing-Yin Jhang, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for fabricating a magnetic random access memory (MRAM) device includes the steps of first forming a first magnetic tunneling junction (MTJ) on a substrate, forming a first top electrode on the first MTJ, and then forming a passivation layer around the first MTJ. Preferably, the passivation layer includes a V-shape and a valley point of the V-shape is higher than a top surface of the first top electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile