The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Aug. 23, 2021
Applicant:

Enkris Semiconductor, Inc., Suzhou, CN;

Inventors:

Kai Cheng, Suzhou, CN;

Yu Zhu, Nantong, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7842 (2013.01);
Abstract

Disclosed are a semiconductor structure and a manufacturing method therefor, solving the problem that it is difficult for an existing semiconductor structure to deplete a carrier concentration of a channel under a gate so as to achieve an enhancement-mode device. The semiconductor structure comprises: a channel layer and a barrier layer stacked in sequence. A gate region is defined on a surface of the barrier layer; a plurality of trenches formed in the gate region. The plurality of trenches are extended into the channel layer; and a stress applying material filled in the plurality of trenches. A lattice constant of the stress applying material is greater than that of the channel layer.


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