The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 05, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Prantik Mahajan, Dresden, DE;
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Disclosed semiconductor structure embodiments include a bipolar junction device configured to have a high holding voltage. The device includes base, collector and emitter terminals. The high holding voltage is achieved because of a uniquely configured emitter terminal. Specifically, the device includes a base well region, which has a first-type conductivity. The emitter terminal includes, adjacent to the base well region (e.g., within and/or on the base well region), an emitter contact region, which has a second-type conductivity, and an ancillary emitter region, which abuts the emitter contact region and which has the first-type conductivity at a higher conductivity level than the base well region. Embodiments vary with regard to the shapes of the emitter contact region and ancillary emitter region. Embodiments also vary with regard to the structures used to isolate the collector terminal from the emitter terminal and with regard to the areas covered by silicide layers.