The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 28, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Chi-Yi Chuang, Hsinchu, TW;
Cheng-Ting Chung, Hsinchu, TW;
Hou-Yu Chen, Hsinchu, TW;
Kuan-Lun Cheng, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A semiconductor device structure, along with methods of forming such, are described. The structure includes first and second source/drain epitaxial features, a first gate electrode layer disposed between the first and second source/drain epitaxial features, third and fourth source/drain epitaxial features, a second gate electrode layer disposed between the third and fourth source/drain epitaxial features, fifth and sixth source/drain epitaxial features disposed over the first and second source/drain epitaxial features, and a third gate electrode layer disposed between the fifth and sixth source/drain epitaxial features. The third gate electrode layer is electrically connected to the second source/drain epitaxial feature. The structure further includes a seventh source/drain epitaxial feature disposed over the third source/drain epitaxial feature and an eighth source/drain epitaxial feature disposed over the fourth source/drain epitaxial feature. The second gate electrode layer is disposed between the seventh and eighth source/drain epitaxial features.