The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jul. 29, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuang-Wei Cheng, Hsinchu, TW;
Chyi-Tsong Ni, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A semiconductor device may include one or more low dielectric constant (low-κ) layers on a substrate. The semiconductor device may include a dielectric layer on the one or more low-κ layers. The semiconductor device may include a structure through the substrate, the one or more low-κ layers, and the dielectric layer. The semiconductor device may include a liner layer between the structure and the substrate, between the structure and the one or more low-κ layers, and between the structure and the dielectric layer. The semiconductor device may include a capping layer between the liner layer and the dielectric layer and between the liner layer and the one or more low-κ layers.