The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Jul. 29, 2021
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Yi-Wang Jhan, Taichung, TW;
Fu-Che Lee, Taichung, TW;
Huixian Lai, Quanzhou, CN;
Yu-Cheng Tung, Kaohsiung, TW;
An-Chi Liu, Tainan, TW;
Gang-Yi Lin, Taitung County, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
The present disclosure relates to a semiconductor device and a method of forming the same, and the semiconductor device includes a substrate, a gate line and a stress layer. The substrate has a plurality of first fins protruded from the substrate. The gate line is disposed over the substrate, across the first fins, to further include a gate electrode and a gate dielectric layer, wherein the dielectric layer is disposed between the gate electrode layer and the first fins. The stress layer is disposed only on lateral surfaces of the first fins and on a top surface of the substrate, wherein a material of the stress layer is different from a material of the first fins.