The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

May. 04, 2023
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chung-Hui Chen, Hsinchu, TW;

Tzu-Ching Chang, Hsinchu, TW;

Cheng-Hsiang Hsieh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); G06F 30/3953 (2020.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/3953 (2020.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01);
Abstract

An integrated circuit (IC) device includes a substrate having opposite first and second sides, an active region over the first side of the substrate, a first transistor and a second transistor over the first side of the substrate, a first conductive pattern over the first side of the substrate, and a second conductive pattern under the second side of the substrate. The first conductive pattern electrically couples a first terminal of the first transistor to a second terminal of the second transistor. The second conductive pattern electrically couples the first terminal of the first transistor to the second terminal of the second transistor.


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