The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Mar. 29, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Wei-Cheng Lin, Hsinchu, TW;

Hui-Ting Yang, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Lipen Yuan, Hsinchu, TW;

Wei-An Lai, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); G06F 30/39 (2020.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/39 (2020.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/1033 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes a first transistor having a first fin, wherein a base of the first fin is surrounded by a first dielectric material, the first fin having a first fin height measured from the top surface of the first dielectric material to a top surface of the first fin; and a second transistor having a second fin, wherein a base of the second fin is surrounded by a second dielectric material, the second fin having a second fin height measured from a top surface of the second dielectric material to a top surface of the second fin, wherein the first fin height is different from the second fin height.


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