The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Nov. 02, 2020
Applicants:
Dynex Semiconductor Limited, Lincolnshire, GB;
Zhuzhou Crrc Times Semiconductor Co. Ltd., Hunan, CN;
Inventors:
Assignees:
DYNEX SEMICONDUCTOR LIMITED, Lincolnshire, GB;
ZHUZHOU CRRC TIMES ELECTRIC CO. LTD., Zhuzhou, CN;
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/18 (2023.01); H01L 23/00 (2006.01); H01L 23/24 (2006.01); H01L 25/00 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); H01L 25/071 (2013.01); H01L 25/50 (2013.01); H01L 23/24 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/15747 (2013.01);
Abstract
We herein describe a semiconductor device sub-assembly comprising at least two power semiconductor devices and a contact of a first type. A first power semiconductor device is located on a first side of the contact of a first type, and a second power semiconductor device is located on a second side of the contact of a first type, where the second side is opposite to the first side.