The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Apr. 02, 2020
Hitachi Energy Ltd, Zürich, CH;
Arne Schroeder, Bern, CH;
Slavo Kicin, Zürich, CH;
Fabian Mohn, Ennetbaden, CH;
Juergen Schuderer, Zürich, CH;
Hitachi Energy Ltd, Zürich, CH;
Abstract
A power semiconductor module includes a main substrate and power semiconductor chips. Each power semiconductor chip is bonded to the main conductive layer with the first power electrode. A first group of the power semiconductor chips is connected in parallel via the second power electrodes and a second group of the power semiconductor chips is connected in parallel via the second power electrodes. The module also includes a first insulation layer and a first conductive layer overlying the first insulation layer as well as a second insulation layer and a second conductive layer overlying the second insulation layer. The first conductive layer provides a first gate conductor area and a first auxiliary emitter conductor area for the first group. The second conductive layer provides a second gate conductor area and a second auxiliary emitter conductor area for the second group.