The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 20, 2024

Filed:

Aug. 18, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Tzu Ching Hung, Taichung, TW;

Chien Wen Huang, Taichung, TW;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2023.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 21/76877 (2013.01); H01L 23/5384 (2013.01); H01L 23/5386 (2013.01); H01L 24/11 (2013.01); H01L 24/14 (2013.01); H01L 24/73 (2013.01);
Abstract

A stacked semiconductor device having hybrid metallic structures and associated systems and methods are disclosed herein. The stacked semiconductor device can include a first semiconductor die and a second semiconductor die. The first semiconductor die can include a top surface, a first bond site at the top surface and a second bond site at the first surface spaced apart from the first bond site. The second semiconductor die can include a lower surface facing the top surface of the first semiconductor die, a third bond site at the lower surface, and a fourth bond site at the lower surface. The third bond site includes a conductive structure bonded to the first bond site by a metal-metal bond. The fourth bond site at the lower surface includes a solder ball bonded to the second bond site.


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