The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Nov. 04, 2021
SK Keyfoundry Inc., Cheongju-si, KR;
Hyun Kwang Shin, Cheongju-si, KR;
SK keyfoundry Inc., Cheongju-si, KR;
Abstract
A trench power MOSFET includes a body region disposed on a semiconductor substrate, a trench passing through the body region, an top electrode and a bottom electrode spaced apart from each other in a vertical direction in the trench, an inter-electrode dielectric layer disposed between the top electrode and the bottom electrode, and a plurality of dielectric layers, disposed between a sidewall of the trench and the bottom electrode, comprising a first oxide layer disposed on the sidewall of the trench, an barrier layer disposed on the first oxide layer, and a second oxide layer disposed on the barrier layer. The barrier layer is formed of a material different from materials of the first and second oxide layers.