The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jan. 12, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Inventors:
Chung-Hui Chen, Hsinchu, TW;
Wan-Te Chen, Taipei, TW;
Cheng-Hsiang Hsieh, Taipei, TW;
Chia-Tien Wu, Taichung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/01 (2013.01); H01L 23/5223 (2013.01); H01L 23/5228 (2013.01); H01L 23/528 (2013.01); H01L 28/20 (2013.01); H01L 28/40 (2013.01);
Abstract
Methods and semiconductor devices are described herein which eliminate the use of additional masks. A first interconnect layer is formed. A first resistive layer is formed on top of the first interconnect layer. A dielectric layer is formed on top of the first resistive layer. A second resistive layer is formed on top of the dielectric layer.