The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Dec. 19, 2019
Applicant:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Inventors:
Akiko Hirata, Kanagawa, JP;
Tetsuya Tatsumi, Kanagawa, JP;
Masanaga Fukasawa, Kanagawa, JP;
Satoshi Hamaguchi, Kanagawa, JP;
Kazuhiro Karahashi, Kanagawa, JP;
Assignee:
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01L 27/14692 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01);
Abstract
In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.