The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Jan. 26, 2022
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Hieu Van Tran, San Jose, CA (US);
Anh Ly, San Jose, CA (US);
Kha Nguyen, Ho Chi Minh, VN;
Hien Pham, Ho Chi Minh, VN;
Duc Nguyen, Ho Chi Minh, VN;
Assignee:
SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/16 (2006.01); G11C 16/10 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01);
U.S. Cl.
CPC ...
G11C 16/16 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01);
Abstract
Numerous embodiments of a transceiver for providing high voltages for use during erase or program operations in a non-volatile memory system are disclosed. In one embodiment, a transceiver comprises a PMOS transistor and a native NMOS transistor. In another embodiment, a transceiver comprises a PMOS transistor, an NMOS transistor, and a native NMOS transistor.