The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Jul. 26, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventor:
William J. Gallagher, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); H01F 10/32 (2006.01); H01F 41/34 (2006.01); H01L 21/033 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H01F 41/34 (2013.01); H01L 21/0332 (2013.01); H10B 61/00 (2023.02); H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 10/329 (2013.01);
Abstract
Some examples relate to an integrated circuit. The integrated circuit comprises a semiconductor substrate, a bottom electrode over the substrate, a circular magnetic tunneling junction (MTJ) disposed over an upper surface of bottom electrode, and a circular top electrode disposed over an upper surface of the magnetic tunneling junction. The circular top electrode is concentric to the circular magnetic tunneling junction, and a diameter of the circular magnetic tunneling junction is smaller than 60 nm or smaller than 30 nm.