The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Jun. 15, 2023
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Christian Rivero, Rousset, FR;
Brice Arrazat, Bouc-bel-air, FR;
Julien Delalleau, Marseilles, FR;
Joel Metz, Gardanne, FR;
Assignee:
STMicroelectronics (Rousset) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); H10B 41/35 (2023.01);
U.S. Cl.
CPC ...
H01L 29/945 (2013.01); H01L 21/2652 (2013.01); H01L 28/91 (2013.01); H01L 29/40114 (2019.08); H01L 29/4236 (2013.01); H01L 29/788 (2013.01); H10B 41/35 (2023.02);
Abstract
A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.