The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 10, 2021
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A field effect transistor contains a semiconductor material layer including a source-side doped well, a source region, and a drain region. A shallow trench isolation structure is embedded in the semiconductor material layer and extends between the source region and the drain region. Agate dielectric layer overlies the semiconductor material layer. A horizontally-extending portion of a gate electrode overlies the gate dielectric layer, and at least one downward-protruding portion of the gate electrode extends downward from a bottom surface of the horizontally-extending portion into an upper region of the shallow trench isolation structure. The gate electrode is vertically spaced from a bottom surface of the shallow trench isolation structure modifies electrical field in a semiconductor channel to reduce hot carrier injection.