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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12057469 B1

PDFFull Text
Date of Patent:
Aug. 06, 2024

Filed:

May. 28, 2021

Semiconductor device and a method of fabricating the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yu-Chiun Lin, Taipei, TW;

Po-Nien Chen, Miaoli, TW;

Chen Hua Tsai, Hsinchu County, TW;

Chih-Yung Lin, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

STUDEBAKER & BRACKETT PC

Primary Examiner:

Latanya N Crawford Eason

Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 21/3205 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 27/06 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/24 (2013.01); H01L 21/32051 (2013.01); H01L 21/823821 (2013.01); H01L 23/5228 (2013.01); H01L 27/0207 (2013.01); H01L 27/0629 (2013.01); H01L 27/0924 (2013.01); H01L 29/1079 (2013.01); H01L 29/1095 (2013.01); H01L 29/6681 (2013.01); H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 21/823493 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01);
Abstract

A semiconductor device includes a substrate having a first conductivity type, a first well formed in the substrate and having a second conductivity type, a first diffusion region formed in the first well and having the first conductivity type, a first interlayer dielectric layer disposed over the first well and the first diffusion region, and a resistor wire formed of a conductive material and embedded in the first interlayer dielectric layer. The resistor wire overlaps the first diffusion region and at least partially overlaps the first well in plan view.

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