The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Jul. 26, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Yang Ming Chiao Tung University, Hsinchu, TW;
Chenming Hu, Oakland, CA (US);
Po-Tsang Huang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Abstract
A method includes following steps. An interconnect structure is formed over a first transistor. A dielectric layer is formed over the interconnect structure. The dielectric layer is etched to form holes in the dielectric layer. An amorphous layer is deposited in the holes of the dielectric layer and on a top surface of the dielectric layer. The amorphous layer is crystallized into a polycrystalline layer. A second transistor is formed on the polycrystalline layer.