The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Sep. 17, 2020
Intel Corporation, Santa Clara, CA (US);
Wei Qian, Walnut, CA (US);
Cung Tran, Niskayuna, NY (US);
Sungbong Park, Gyeonggi-do, KR;
John Heck, Berkeley, CA (US);
Mark Isenberger, Corrales, NM (US);
Seth Slavin, Albuquerque, NM (US);
Mengyuan Huang, Cupertino, CA (US);
Kelly Magruder, Albuquerque, NM (US);
Harel Frish, Albuquerque, NM (US);
Reece Defrees, Rio Rancho, NM (US);
Zhi Li, San Jose, CA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.