The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Mar. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi Chen Ho, Taichung, TW;
Yu-Chuan Chen, Taichung, TW;
Chieh Cheng, Hsinchu, TW;
Chi-Hsun Lin, Hsinchu, TW;
Zheng-Yang Pan, Zhubei, TW;
Shahaji B. More, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.