The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Mar. 03, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Shashank Shrikant Agashe, Bangalore, IN;
Gaurav Kumar, Bangalore, IN;
Sathyanarayanan Kulasekaran, Bangalore, IN;
Chanwoo Park, Suwon-si, KR;
Yunje Cho, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.