The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Aug. 08, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Cheng-Hsien Wu, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/786 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32055 (2013.01); H01L 21/02595 (2013.01); H01L 21/0475 (2013.01); H01L 29/78672 (2013.01); H01L 21/02683 (2013.01); H01L 21/02686 (2013.01); H01L 21/324 (2013.01);
Abstract
A method for forming a polycrystalline semiconductor layer includes forming a plurality of spacers over a dielectric layer, etching the dielectric layer using the plurality of spacers as an etch mask to form a recess in the dielectric layer, depositing an amorphous semiconductor layer over the plurality of spacers and the dielectric layer to fill the recess, and recrystallizing the amorphous semiconductor layer to form a polycrystalline semiconductor layer.